npn silicon planar medium power high voltage transistors issue 2 ? july 94 features * 300 volt v ceo * 0.5 amp continuous current *p tot =1 watt absolute maximum ratings. parameter symbol ZTX656 ztx657 unit collector-base voltage v cbo 200 300 v collector-emitter voltage v ceo 200 300 v emitter-base voltage v ebo 5v peak pulse current i cm 1a continuous collector current i c 0.5 a power dissipation at t amb =25c p tot 1w operating and storage temperature range t j :t stg -55 to +200 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol ZTX656 ztx657 unit conditions. min. max. min. max. collector-base breakdown voltage v (br)cbo 200 300 v i c =100 m a, i e =0 collector-emitter breakdown voltage v (br)ceo 200 300 v i c =10ma, i b =0* emitter-base breakdown voltage v (br)ebo 55v i e =100 m a, i c =0 collector cut-off current i cbo 100 100 na na v cb =160v, i e =0 v cb =200v, i e =0 emitter cut-off current i ebo 100 100 na v eb =3v, i c =0 collector-emitter saturation voltage v ce(sat) 0.5 0.5 v i c =100ma, i b =10ma* base-emitter saturation voltage v be(sat) 11vi c =100ma, i b =10ma* base-emitter turn-on voltage v be(on) 1 1 v ic=100ma, v ce =5v* static forward current transfer ratio h fe 50 40 50 40 i c =100ma, v ce =5v i c =10ma, v ce =5v transition frequency f t 30 30 mhz i c =10ma, v ce =20v f=20mhz e-line to92 compatible ZTX656 ztx657 3-227 c b e typical characteristics v ce(sat) v i c i c - collector current (amps) v ce ( sa t ) - (v olts) i c - collector current (amps) v ce - collector voltage (volts) safe operating area 1 1000 10 100 0.001 0.01 0.1 1 single pulse test at t amb =25c d.c. 1s 100ms 10ms 1.0ms 300s 0.01 0.1 10 1 i c - collector current (amps) v be(sat) v i c v b e (sat) - ( v o lts ) i c /i b =10 i c - collector current (amps) h fe v i c h f e - no r mal ised ga i n ( % ) 0.01 10 0.1 1 v ce =5v 0.01 10 0.1 1 0.6 0.8 1.0 1.2 i c /i b =10 0.4 i c - collector current (amps) v be(on) v i c v b e - ( v olts ) switching speeds i c - collector current (amps) switching time 0.1 1 i b1 =i b2 =i c /10 0.01 ts tf td tr 1.2 1.4 0 ts s 2 1 3 td tr tf s 0.6 0.4 0.2 0.8 1.0 40 60 80 100 20 0 0.01 10 0.1 1 0.6 0.8 1.0 1.2 0.4 v ce =5v zt x 6 5 6 v ce =10v 0.4 0.6 0.8 1.0 0.2 0 1.4 1.6 1.2 1.8 0 zt x 65 7 ZTX656 ztx657 3-228
npn silicon planar medium power high voltage transistors issue 2 ? july 94 features * 300 volt v ceo * 0.5 amp continuous current *p tot =1 watt absolute maximum ratings. parameter symbol ZTX656 ztx657 unit collector-base voltage v cbo 200 300 v collector-emitter voltage v ceo 200 300 v emitter-base voltage v ebo 5v peak pulse current i cm 1a continuous collector current i c 0.5 a power dissipation at t amb =25c p tot 1w operating and storage temperature range t j :t stg -55 to +200 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol ZTX656 ztx657 unit conditions. min. max. min. max. collector-base breakdown voltage v (br)cbo 200 300 v i c =100 m a, i e =0 collector-emitter breakdown voltage v (br)ceo 200 300 v i c =10ma, i b =0* emitter-base breakdown voltage v (br)ebo 55v i e =100 m a, i c =0 collector cut-off current i cbo 100 100 na na v cb =160v, i e =0 v cb =200v, i e =0 emitter cut-off current i ebo 100 100 na v eb =3v, i c =0 collector-emitter saturation voltage v ce(sat) 0.5 0.5 v i c =100ma, i b =10ma* base-emitter saturation voltage v be(sat) 11vi c =100ma, i b =10ma* base-emitter turn-on voltage v be(on) 1 1 v ic=100ma, v ce =5v* static forward current transfer ratio h fe 50 40 50 40 i c =100ma, v ce =5v i c =10ma, v ce =5v transition frequency f t 30 30 mhz i c =10ma, v ce =20v f=20mhz e-line to92 compatible ZTX656 ztx657 3-227 c b e typical characteristics v ce(sat) v i c i c - collector current (amps) v ce ( sa t ) - (v olts) i c - collector current (amps) v ce - collector voltage (volts) safe operating area 1 1000 10 100 0.001 0.01 0.1 1 single pulse test at t amb =25c d.c. 1s 100ms 10ms 1.0ms 300s 0.01 0.1 10 1 i c - collector current (amps) v be(sat) v i c v b e (sat) - ( v o lts ) i c /i b =10 i c - collector current (amps) h fe v i c h f e - no r mal ised ga i n ( % ) 0.01 10 0.1 1 v ce =5v 0.01 10 0.1 1 0.6 0.8 1.0 1.2 i c /i b =10 0.4 i c - collector current (amps) v be(on) v i c v b e - ( v olts ) switching speeds i c - collector current (amps) switching time 0.1 1 i b1 =i b2 =i c /10 0.01 ts tf td tr 1.2 1.4 0 ts s 2 1 3 td tr tf s 0.6 0.4 0.2 0.8 1.0 40 60 80 100 20 0 0.01 10 0.1 1 0.6 0.8 1.0 1.2 0.4 v ce =5v zt x 6 5 6 v ce =10v 0.4 0.6 0.8 1.0 0.2 0 1.4 1.6 1.2 1.8 0 zt x 65 7 ZTX656 ztx657 3-228
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